Research Topics

SIRI Lab

System Integration

Packaging essentially requires the combination of electronic parts (transistors, connections, insulation) smoothly working in tandem and, if possible, enhancing the device function. This is why the buzzword heterogenous integration is at the core of advanced packaging. By finding the optimum method of integrating the parts, an improved modern device is made. In SIRI lab we use certain methods like active power cycling, heat management, and AI image verification to make the best semiconductor devices.

GaN HEMT PoL Converter for Data Centers

Purpose: As data center power demands increase, heat management of power devices becomes an integral research objective to prevent large system failures. GaN HEMT devices are used in Point-of-Load (PoL) converters to efficiently step-up and -down voltages at these high power levels. This topic aims to observe the heat dissipation of these devices under accelerated stress conditions(both static and dynamic) and improve heat dissipation through novel packaging innovation.

Active Power Cycling

Purpose: Reliability tests on power electronic packages are crucial for ensuring the durability and safety of electronic devices. These tests assess the package’s ability to withstand various stressors such as temperature fluctuations, mechanical shocks, and electrical overloads. By subjecting packages to rigorous conditions, we can identify potential weaknesses and failure before they impact the end product. This enhances the reliability of electronic devices by delivering products that perform consistently under diverse and harsh operating conditions.

Heat Management

Purpose: Research on advanced packaging and heat management for High Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) devices is critical due to the rising demand for high-power electronics across various sectors. GaN HEMT devices offer significant advantages including high-power density, efficiency, and frequency operation. However, their operation generates substantial heat that can compromise performance and reliability if not managed effectively. Thus, integrating these GaN HEMT devices into multiple subsystems with advanced packaging techniques and efficient heat management strategies is vital.

Advanced Packaging Materials

Power Semiconductors