Research Topics

Power Semiconductors

In SIRI Lab, we focus on advancing electronic packaging towards solutions that combat the problems of increased power density due to device miniaturization. The power electronics industry uses wide bandgap materials (WBG) which have superior electrical and thermal properties such as reduced breakdown voltage, higher operating frequencies, and higher power allowance due to the wider bandgap. For example, Gallium Nitride (GaN) has an energy bandgap of 3.4 eV compared to Silicon’s 1.1 eV. However, these WBGs can also hold a host of problems that require intelligent device design, characterization, and proper thermal analysis. Currently, SIRI lab only has projects related to Gallium Nitride but in the future, we may work on Silicon Carbide (SiC) devices as well. You can look below at three projects in SIRI lab that integrate GaN HEMTs (High Electron Mobility Transistors) for modern applications.

Gallium Nitride Devices

Point of Load Converter for AI Cluster Power Supply

Optimize GaN HEMT package for high power, high-frequency application that redistributes power to GPU with low loss and high efficiency.

GaN with Si Photonics

Achieve heterogenous integration of GaN HEMT Laser driver, Laser, and Silicon Photonics chip.

Improved GaN HEMT Package for Wireless Power Transfer

Create package for GaN HEMT with reduced impedance and improved heat management for highly efficient power transfer.